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MDU1511RH PDF 데이터시트 ( Data , Function )

부품번호 MDU1511RH 기능
기능 Single N-channel Trench MOSFET
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MDU1511RH 데이터시트, 핀배열, 회로
MDU1511
Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ
General Description
The MDU1511 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1511 is suitable device for DC/DC Converter
and general purpose applications.
Features
VDS = 30V
ID = 100A @VGS = 10V
RDS(ON)
< 2.4 m@VGS = 10V
< 3.3 m@VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Steady State
Thermal Resistance, Junction-to-Case
Steady State
May. 2011. Version 1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
100.0
94.0
36.1(3)
28.8(3)
100
78.1
50.0
5.5(3)
3.5(3)
287
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
22.7
1.6
Unit
oC/W
MagnaChip Semiconductor Ltd.




MDU1511RH pdf, 반도체, 판매, 대치품
10
Note : ID = 28A
VDS = 15V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50 55
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
Operation in This Area
is Limited by R DS(on)
102
101
10 ms
10 s
100 ms
1s
DC
100
10-1
10-2
10-1
Single Pulse
TJ=Max Rated
TC=25
100 101
VDS, Drain-Source Voltage [V]
102
Fig.9 Maximum Safe Operating Area
101
100 D=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
single pulse
Notes :
Duty Factor, D=t1/t2
PEAK T = P * Z * R (t) + T
J DM θ JC θ JC
C
10-3
10-4 10-3 10-2 10-1 100 101 102 103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
4000
3500
3000
2500
2000
1500
1000
500
0
0
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Crss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
5 10 15 20
VDS, Drain-Source Voltage [V]
25
Fig.8 Capacitance Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
25
50 75 100 125
TA, Case Temperature []
150
Fig.10 Maximum Drain Current
Vs. Case Temperature
May. 2011. Version 1.2
4 MagnaChip Semiconductor Ltd.

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MDU1511RH

Single N-channel Trench MOSFET

MagnaChip
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