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PDF K80E08K3 Data sheet ( Hoja de datos )
| Número de pieza | K80E08K3 | |
| Descripción | TK80E08K3 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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 1. N-Ch, 75V, MOSFET - Toshiba  Hay una vista previa y un enlace de descarga de K80E08K3 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Target Specification
TK80E08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS )
TK80E08K3
E-Bike/UPS/Inverter
Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.)
High forward transfer admittance : |Yfs| = 135 S (typ.)
Low leakage current
: IDSS = 10 µA (max) (VDS = 75 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DC (Note 1)
Drain current
DC (Note 1,4)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Peak diode recovery dv/dt (Note 5)
Channel temperature (Note 4)
Storage temperature range (Note 4)
VDSS
VDGR
VGSS
ID
ID
IDP
PD
EAS
IAR
EAR
dv/dt
Tch
Tstg
75
75
±20
80
70
240
200
107
40
20
12
175
−55~175
V
V
V
A
A
A
W
mJ
A
mJ
V/ns
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
Weight: 1.9 g (typ.)
Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significa2nt change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor R1 eliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
Rth (ch−c)
Rth (ch−a)
Max Unit
0.75 °C / W
83.3 °C / W
3
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω, IAR = 40A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Tc=100
Note 5: IDR 80A,di/dt 160A/µs, Tch Tch max.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-4-2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K80E08K3.PDF ] | |
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