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PDF 18NM80 Data sheet ( Hoja de datos )
| Número de pieza | 18NM80 | |
| Descripción | STF18NM80 | |
| Fabricantes | STMicroelectronics | |
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STB18NM80, STF18NM80,
STP18NM80, STW18NM80
N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on)
max
ID
STB18NM80
STF18NM80
STP18NM80
STW18NM80
800 V
800 V
800 V
800 V
< 0.295 Ω
< 0.295 Ω
< 0.295 Ω
< 0.295 Ω
17 A
17 A (1)
17 A
17 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics’
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST’s proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
3
1
D²PAK
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB18NM80
STF18NM80
STP18NM80
STW18NM80
Marking
18NM80
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2012
This is information on a product in full production.
Doc ID 15421 Rev 5
1/21
www.st.com
21
1 page  
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 400 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16 and
Figure 21)
Min.
-
Typ.
18
28
96
50
Max. Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VGS = 0
ISD = 17 A, di/dt = 100
A/µs, VDD = 100 V,
(see Figure 18)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,
di/dt = 100 A/µs,
VDD = 100 V, Tj=150°C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ.
-
-
618
- 9.6
31.2
Max. Unit
17 A
68 A
1.6 V
ns
µC
A
822
- 13
31.8
ns
µC
A
Doc ID 15421 Rev 5
5/21
5 Page 
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 22. D²PAK (TO-263) drawing
Package mechanical data
Figure 23. D²PAK footprint(a)
16.90
0079457_T
12.20
1.60
5.08
9.75
a. All dimensions are in millimeters
Doc ID 15421 Rev 5
3.50
Footprint
11/21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet 18NM80.PDF ] | |
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