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부품번호 | TK7P50D 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 6 페이지수
TK7P50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK7P50D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
Unit: mm
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
7
28
100
105
7
10
150
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1.14MAX
0.76 ± 0.12
2.29
123
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURCE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max Unit
1.25 °C/W
125 °C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.64 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-03-11
RDS (ON) – Tc
5
COMMON SOURCE
VGS = 10 V
PULSE TEST
4
37
3.5
2
ID = 1.8 A
1
0
−80 −40
0
40 80 120 160
CASE TEMPERATURE Tc (°C)
IDR – VDS
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
TK7P50D
1
10 5
3 1 VGS = 0,−1 V
0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
DRAIN-SOURCE VOLTAGE VDS (V)
10000
CAPACITANCE – VDS
1000
Ciss
100 Coss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80 −40
0
40
80 120
CASE TEMPERATURE Tc (°C)
160
PD – Tc
160
120
80
40
0
0 40 80 120 160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
VDS
400
300
200
VDD = 100 V
400
20
16
12
200 8
VGS
COMMON SOURCE
ID = 7 A
100
Tc = 25°C
PULSE TEST
4
00
0 4 8 12 16 20
TOTAL GATE CHARGE Qg (nC)
4 2010-03-11
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
TK7P50D | MOSFET ( Transistor ) | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |