Datasheet.kr   

TK12X53D 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 TK12X53D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 TK12X53D 자료 제공

부품번호 TK12X53D 기능
기능 MOSFET ( Transistor )
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고


TK12X53D 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 6 페이지수

미리보기를 사용할 수 없습니다

TK12X53D 데이터시트, 핀배열, 회로
TK12X53D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK12X53D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.5 (typ.)
High forward transfer admittance: Yfs= 6.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 525 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.2 MAX.
7.0 ± 0.2
4
Unit: mm
0.4 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
525
±30
12
48
150
378
12
15
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.0 1.5 2.0 2.5
12
3
1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2
1. GATE G
2. N.C.
3. SOURCES
4. DRAIN D
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1C
Weight : 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.5 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
4
3
1 2010-08-27




TK12X53D pdf, 반도체, 판매, 대치품
RDS (ON) – Tc
2.5
COMMON SOURCE
VGS = 10 V
PULSE TEST
2.0
1.5
ID = 12 A
6
1.0
3
0.5
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
TK12X53D
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
0.1
0
53
1
VGS = 0 V
0.2 0.4 0.6 0.8 1.0
1.2
1.4
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
100
CAPACITANCE – VDS
Ciss
Coss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80 40
0
40
80 120
CASE TEMPERATURE Tc (°C)
160
PD – Tc
200
150
100
50
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500 20
VDS
400
16
300 VDD = 100 V
12
400
200
100
0
0
200 8
VGS
COMMON SOURCE
ID = 12 A
Tc = 25°C
4
PULSE TEST
10 20 30
TOTAL GATE CHARGE Qg (nC)
0
40
4 2010-08-27

4페이지












구       성 총 6 페이지수
다운로드[ TK12X53D.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
TK12X53D

MOSFET ( Transistor )

Toshiba Semiconductor
Toshiba Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵