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PDF TK150F04K3 Data sheet ( Hoja de datos )
| Número de pieza | TK150F04K3 | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
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TK150F04K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK150F04K3
Swiching Regulator, DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 1.7mΩ (typ.)
• High forward transfer admittance: |Yfs| = 210 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
• Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
150
450
300
234
150
30
175
−55 to 175
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
10.0 ± 0.3
9.5 ± 0.2
Unit: mm
0.4 ± 0.1
1.1
0.76 ± 0.1
1.4 ± 0.1
2.54 ± 0.25
2.35 ± 0.1
2.34 ± 0.25
123
0.4 ± 0.1
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
8.0
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-10W1A
Weight: 1.07 g (typ.)
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Symbol
Rth (ch-c)
Max
0.5
Unit
°C/W
1
Note 1: Please use devices on condition that the channel temperature is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 11 μH, RG = 25 Ω, IAR = 150 A
3
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution
1 2009-04-17
1 page  
RDS (ON) − Tc
4
Common source
Pulse Test
3
2
VGS = 10 V
1
ID = 38, 75, 150A
0
−80 −40
0
40 80 120 160 200
Case temperature Tc (°C)
TK150F04K3
IDR − VDS
1000
10
100
5
3
1
10 VGS = 0, −1V
Common source
Tc = 25°C
Pulse Test
1
0 −0.4 −0.8 −1.2 −1.6 −2
Drain-source voltage VDS (V)
100000
Capacitance – VDS
10000
Ciss
1000
Common source
VGS = 0 V
f =1MHz
100 Tc = 25°C
0.1
1
Coss
Crss
10 100
Drain-source voltage VDS (V)
Vth − Tc
5 Common source
VDS = 10 V
ID = 1mA
4 Pulse Test
3
2
1
0
−80 −40
0
40 80 120 160 200
Case temperature Tc (°C)
PD − Tc
400
300
200
100
0
0 40 80 120 160 200
Case temperature Tc (°C)
Dynamic input / output
characteristics
40 16
35 VDS
30
25
20
VGS
16
VDD = 32V
12
8
15
Common source
10
ID = 150 A
Tc = 25°C
4
Pulse Test
5
00
0 50 100 150 200 250 300
Total gate charge Qg (nC)
5 2009-04-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TK150F04K3.PDF ] | |
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