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HCTS374T 데이터시트 PDF




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부품번호 HCTS374T 기능
기능 Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
제조업체 Intersil Corporation
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HCTS374T 데이터시트, 핀배열, 회로
HCTS365MS
September 1995
Radiation Hardened
Hex Buffer/Line Driver Non-Inverting
Features
Pinouts
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs: 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
OE1 1
A1 2
Y1 3
A2 4
Y2 5
A3 6
Y3 7
GND 8
16 VCC
15 OE2
14 A6
13 Y6
12 A5
11 Y5
10 A4
9 Y4
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA @ VOL, VOH
Description
The Intersil HCTS365MS is a Radiation Hardened non-
inverting hex buffer and line driver with Tri-state outputs. The
output enables (OE1 and OE2) control the three-state out-
puts. If either OE1 or OE2 is high the outputs will be in a
High impedance state. For Data, OE1 and OE2 must be
Low.
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
OE1
A1
Y1
A2
Y2
A3
Y3
GND
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
VCC
OE2
A6
Y6
A5
Y5
A4
Y4
The HCTS365MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
Ordering Information
PART NUMBER
HCTS365DMSR
HCTS365KMSR
HCTS365D/Sample
HCTS365K/Sample
HCTS365HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number 518637
File Number 3070.1




HCTS374T pdf, 반도체, 판매, 대치품
Specifications HCTS365MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Data to Output
SYMBOL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TPHL VCC = 4.5V
Enable to Output
TPZL VCC = 4.5V
TPZH VCC = 4.5V
Disable to Output
TPLZ VCC = 4.5V
TPHZ VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
MIN MAX UNITS
2 19 ns
2 23 ns
2 19 ns
2 23 ns
2 27 ns
2 33 ns
2 22 ns
2 26 ns
2 24 ns
2 27 ns
2 22 ns
2 25 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
Input Capacitance
CIN VCC = 5.0V, f = 1MHz
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
MIN MAX UNITS
- 41 pF
- 53 pF
- 10 pF
- 10 pF
12 12 ns
18 18 ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
Output Voltage High
SYMBOL
(NOTES 1, 2)
CONDITIONS
ICC VCC = 5.5V, VIN = VCC or GND
IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VOL
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOL = 50µA
VOH
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOH = -50µA
TEMPERATURE
+25oC
+25oC
200K LIMITS
RAD
MIN MAX
- 0.75
6.0 -
+25oC
-6.0 -
+25oC
- 0.1
+25oC
VCC
-0.1
-
UNITS
mA
mA
mA
V
V
Spec Number 518637
4

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HCTS374T 전자부품, 판매, 대치품
HCTS365MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518637
7

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