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PDF TK20C60W Data sheet ( Hoja de datos )
| Número de pieza | TK20C60W | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
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MOSFETs Silicon N-Channel MOS (DTMOS)
TK20C60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK20C60W
1: Gate
2: Drain (Heatsink)
3: Source
I2PAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
20 A
Drain current (pulsed)
(Note 1)
IDP
80
Power dissipation
(Tc = 25)
PD 165 W
Single-pulse avalanche energy
(Note 2)
EAS
200 mJ
Avalanche current
IAR 5 A
Reverse drain current (DC)
(Note 1)
IDR
20
Reverse drain current (pulsed)
(Note 1)
IDRP
80
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2012-12
1 2013-12-25
Rev.3.0
1 page  
8. Characteristics Curves (Note)
TK20C60W
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.6 RDS(ON) - ID
5 2013-12-25
Rev.3.0
5 Page | ||
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| PDF Descargar | [ Datasheet TK20C60W.PDF ] | |
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