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부품번호 | TJ9A10M3 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 9 페이지수
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ9A10M3
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
(3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ9A10M3
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
-9 A
Drain current (pulsed)
Power dissipation
(Tc = 25)
(Note 1)
IDP
PD
-18
19 W
Single-pulse avalanche energy
(Note 2)
EAS
25 mJ
Avalanche current
Channel temperature
IAR -9 A
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2012-09-03
Rev.1.0
7. Marking (Note)
TJ9A10M3
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
4 2012-09-03
Rev.1.0
4페이지 TJ9A10M3
Fig. 8.13 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.15 EAS - Tch
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
7 2012-09-03
Rev.1.0
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ TJ9A10M3.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
TJ9A10M3 | MOSFET ( Transistor ) | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |