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PDF TK25A10K3 Data sheet ( Hoja de datos )
| Número de pieza | TK25A10K3 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TK25A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK25A10K3
Swiching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 50 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
25
50
25
39
25
1.72
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
⎯
SC-67
2-10U1B
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 1.7 g (typ.)
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 100 μH, RG = 25 Ω, IAR = 25 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
Rth (ch−c)
Rth (ch−a)
Max Unit
5.0 °C / W
62.5 °C / W
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2009-03-23
1 page  
TK25A10K3
10
1 Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10μ
100μ
rth – tw
SINGLE PULSE
1m
10m
100m
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 5.0°C/W
1
10
SAFE OPERATING AREA
100
ID max (pulse) *
100 μs *
1 ms *
10
1
* Single pulse Tc=25℃
Curves must be derated
linearly with increase in
temperature.
0.1
0.1 1
10
VDSS max
100 1000
Drain-source voltage VDS (V)
EAS – Tch
100
L = 100 μH
VDD = 25 V
IAR = 25 A
80
60
40
20
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 100 μH
Waveform
EΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-03-23
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK25A10K3.PDF ] | |
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