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PDF SSM4800M Data sheet ( Hoja de datos )
| Número de pieza | SSM4800M | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM4800M
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching
Simple Drive Requirement
Description
D
D
D
D
SO-8
G
S
S
S
BV DSS
R DS(ON)
ID
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SSM4800M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low-voltage applications such as DC/DC converters.
G
G
25V
18mΩ
9A
DD
SS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
25
± 20
9
7
40
2.5
0.02
-55 to 150
-55 to 150
Max.
Value
50
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
1 of 6
1 page  
SSM4800M
16
14 I D =9A
V DS =15V
12
10
8
6
4
2
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100 Crss
10
1 6 11 16 21 26
V DS (V)
Fig 10. Typical Capacitance Characteristics
100 3
10
T j =150 o C
1
T j =25 o C
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50 0 50 100 150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Rev.2.01 6/26/2003
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM4800M.PDF ] | |
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