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부품번호 HCTS540K 기능
기능 Radiation Hardened Inverting Octal Buffer/Line Driver/ Three-State
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HCTS540K 데이터시트, 핀배열, 회로
HCTS540MS
September 1995
Radiation Hardened
Inverting Octal Buffer/Line Driver, Three-State
Features
Pinouts
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
OE1 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
A6 8
A7 9
GND 10
20 VCC
19 OE2
18 Y0
17 Y1
16 Y2
15 Y3
14 Y4
13 Y5
12 Y6
11 Y7
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS540MS is a Radiation Hardened inverting
Octal Buffer/Line Driver, with two active-low output enables.
The output enable pins (OE1 and OE2) control the three-
state outputs. If either enable is high the outputs will be in
the high impedance state. For data output both enables
(OE1 and OE2) must be low.
The HCTS540MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
OE1
A0
A1
A2
A3
A4
A5
A6
A7
GND
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
OE2
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
The HCTS540MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCTS540DMSR
HCTS540KMSR
HCTS540D/Sample
HCTS540K/Sample
HCTS540HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number 518631
File Number 2232.2




HCTS540K pdf, 반도체, 판매, 대치품
Specifications HCTS540MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Data to Output
Enable to Output
SYMBOL
(NOTES 1, 2)
CONDITIONS
TPHL VCC = 4.5V
TPLH VCC = 4.5V
TPZL VCC = 4.5V
TPZH VCC = 4.5V
Disable to Output
TPLZ,
TPHZ
VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
9
10, 11
9
10, 11
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
MIN MAX UNITS
2 21 ns
2 25 ns
2 30 ns
2 35 ns
2 26 ns
2 30 ns
2 26 ns
2 30 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CONDITIONS
CPD
VCC = 5.0V, f = 1MHz
Input Capacitance
CIN VCC = 5.0V, f = 1MHz
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
MIN MAX UNITS
- 45 pF
- 50 pF
- 10 pF
- 10 pF
- 12 ns
- 18 ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
VOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
TEMPERATURE
+25oC
+25oC
200K RAD
LIMITS
MIN MAX
- 0.75
6.0 -
+25oC
-6.0 -
+25oC
- 0.1
UNITS
mA
mA
mA
V
Spec Number 518631
4

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HCTS540K 전자부품, 판매, 대치품
HCTS540MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518631
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