(PDF) AP6800GEO Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP6800GEO
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP6800GEO Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Optimal DC/DC battery application ▼ RoHS compliant G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 BVDSS RDS(ON) ID 20V 20mΩ 6 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 PD@TA=25℃ Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Thermal Resistance Junction-ambient3 Rating 20 ±10 6.0 4.7 30 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 125 Unit ℃/W Data and specifications subject to change without notice 200109061-1/4 1 page

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PDF AP6800GEO Data sheet ( Hoja de datos )