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Datasheet TK8A60W Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | TK8A60W | MOSFET, Transistor TK8A60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK8A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 | Toshiba Semiconductor | mosfet |
2 | TK8A60W5 | MOSFET, Transistor TK8A60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK8A60W5
1. Applications
• • Switching Voltage Regulators Motor Drivers
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 80 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ.) by used to Super Junction Structure : D | Toshiba Semiconductor | mosfet |
TK8 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TK80A04K3L | MOSFET, Transistor TK80A04K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK80A04K3L
1. Applications
• • • Automotive Switching Voltage Regulators Motor Drivers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enha Toshiba Semiconductor mosfet | | |
2 | TK80A08K3 | Field Effect Transistor TK80A08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80A08K3
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS Toshiba Semiconductor transistor | | |
3 | TK80D08K3 | Switching Regulator Applications TK80D08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80D08K3
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μ Toshiba Semiconductor regulator | | |
4 | TK80E06K3A | Silicon N-channel MOS TK80E06K3A
MOSFETs Silicon N-channel MOS (U-MOS )
TK80E06K3A
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, Toshiba data | | |
5 | TK80E07NE | Silicon N Channel MOS Type Field Effect Transistor TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drain−source on-resistance
: RDS(ON) = 6.9 mΩ (typ.)
z Low leakage current
Toshiba transistor | | |
6 | TK80E08K3 | Field Effect Transistor Silicon N Channel MOS Type Target Specification
TK80E08K3
)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS
TK80E08K3
E-Bike/UPS/Inverter
Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : Toshiba transistor | | |
7 | TK80F04K3L | Silicon N-channel MOS TK80F04K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK80F04K3L
1. Applications
• • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (m Toshiba data | |
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