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PDF AP9412GJ Data sheet ( Hoja de datos )
| Número de pieza | AP9412GJ | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP9412GJ (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP9412GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
G
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low□
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9412GJ) are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
6mΩ
73A
G
D
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
73
52
250
53.6
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
200509072-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP9412GJ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP9412GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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| AP9412GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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