|
|
Número de pieza | APTGT150DA170G | |
Descripción | IGBT Power Module | |
Fabricantes | Microsemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT150DA170G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTGT150DA170G
Boost chopper
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 150A @ Tc = 80°C
VBUS
CR1
OUT
Q2
G2
E2
0/VBUS
VBUS
E2
G2
0/VBUS
OUT
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
250
150
300
±20
890
300A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page APTGT150DA170G
Operating Frequency vs Collector Current
20
15 ZVS
10 ZCS
VCE=900V
D=50%
RG= 4. 7Ω
TJ=125°C
TC=75°C
5
hard
switc hing
0
0 40 80 120 160 200 240
IC (A)
Forward Characteristic of diode
300
250
TJ=25°C
200
150
100
50 TJ=125°C
TJ= 125°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
0.3
0.25
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.2 0.7
0.15
0.1
0.5
0.3
0.05 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT150DA170G.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT150DA170 | IGBT Power Module | Advanced Power Technology |
APTGT150DA170D1 | IGBT Power Module | Advanced Power Technology |
APTGT150DA170D3 | IGBT Power Module | Advanced Power Technology |
APTGT150DA170G | IGBT Power Module | Microsemi |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |