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PDF APTGT150H170G Data sheet ( Hoja de datos )
| Número de pieza | APTGT150H170G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Microsemi | |
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APTGT150H170G
Full - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 150A @ Tc = 80°C
Q1
G1
Application
VBUS
• Welding converters
Q3
G3
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
E1
OUT1 OUT2
E3 Features
• Trench + Field Stop IGBT® Technology
Q2
G2
Q4
G4
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
E2 E4 - Low diode VF
- Low leakage current
0/VBUS
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
OUT1 • High level of integration
G1 VBUS
E1
0/VBUS
G2
E2 Benefits
• Stable temperature behavior
E3 E4 • Very rugged
G3 G4 • Direct mounting to heatsink (isolated package)
OUT2 • Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
250
150
300
±20
890
300A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT150H170G
Operating Frequency vs Collector Current
20
15 ZVS
10 ZCS
VCE=900V
D=50%
RG= 4. 7Ω
TJ=125°C
TC=75°C
5
hard
switc hing
0
0 40 80 120 160 200 240
IC (A)
Forward Characteristic of diode
300
250
TJ=25°C
200
150
100
50 TJ=125°C
TJ= 125°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
0.3
0.25
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.2 0.7
0.15
0.1
0.5
0.3
0.05 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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