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PDF FPP06R001 Data sheet ( Hoja de datos )
| Número de pieza | FPP06R001 | |
| Descripción | 75V/60A Synchronous Rectifier Module | |
| Fabricantes | Fairchild Semiconductor | |
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FPP06R001
75V/60A Synchronous Rectifier Module
January 2008
Power-SPMTM
tm
General Features
• Very High Rectification Efficiency at Output 12V
• Integrated Solution for Saving Board Space
• Improved Driving Capability with Prominent Internal Driver IC
• RoHS Compliant
Sync-Rectifier Switch Features
• RDS(ON) = 3.5mΩ(Typ.), VIN = 10V, ID = 40A
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Driver IC Features
• 2.5A Max Current Driving Capability
• Low Propagation Delay Time
• Optimized for Increasing Driving Capability Using General
Low-Current Gate Driver with a Minimum Delay Time
Block Diagram
General Description
The FPP06R001 is one product in the Power-SPMTM family that
Fairchild has newly developed and designed to be most suitable
for more compact and more efficient synchronous rectification
applications such as internet server power supplies and telecom
system power supplies. For higher efficiency, it includes built-in
very low RDS(ON) MOSFETs. In addition, it includes the superior
gate driver that supports higher driving capability to be more
suitable for these low RDS(ON) MOSFETs. This Power-SPM
device can be used in the secondary side of the PWM trans-
former of forward/bridge converter to provide high current rectifi-
cation at output voltages ranging from 12 Volts down to 5 Volts.
With this product, it is possible to design the secondary side of
power supply systems with reduced parasitic elements resulting
in minimized voltage spike and EMI noise.
Applications
• High Current Isolated Converter
• Distributed Power Architectures
1
15
EPM15 Package
10
IN2
6
IN1
79
VCC
VCC
Buffer
IN2
Vcc
OUT2
IN1 OUT1
COM
AGND
8
D1
1
Q1
2
15
D2
Q2
S1
34
14
13
S2
12
11
5
Figure 1. FPP06R001 Module Block Diagram
©2008 Fairchild Semiconductor Corporation
FPP06R001 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
* Notes:
1. VIN = 0V
2. ID = 250μA
1.00
Figure 8. On-Resistance Variation
vs. Temperature
2.0
1.5
1.0
0.90
0.85
-50 0 50 100
TJ, Junction Temperature [°C]
150
0.5 * Notes :
1. VIN = 10 V
2. ID = 40 A
0.0
-50 0 50 100 150
TJ, Junction Temperature [°C]
Figure 9. Transient Thermal Response Curve
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.9oC/W Typ.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
Figure 10. Maximum Safe Operating Area
200
100 100μs
1ms
10ms
10 DC
Operation in This Area
is Limited by R DS(on)
1 ※ Notes :
1. TC = 25 oC
2. TJ = 125 oC
3. Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage [V]
100
Figure 11. Unclamped Inductive Switching
Capability
300
100
If R = 0
tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1]
Starting TJ = 25℃
10
Starting TJ = 100℃
1
0.01
0.1 1
10 100
tAV, Time In Avalanche [ms]
1000
FPP06R001 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FPP06R001.PDF ] | |
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