|
|
PDF FDS6676S Data sheet ( Hoja de datos )
| Número de pieza | FDS6676S | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDS6676S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
July 2002
FDS6676S
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6676S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor drives
Features
• 14.5 A, 30 V.
RDS(ON) typ 5.25 mΩ @ VGS = 10 V
RDS(ON) typ 6.00 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (43nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676S
FDS6676S
13’’
5
6
7
8
Ratings
30
±16
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS6676S Rev E1 (W)
1 page  
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676S.
TIME : 12.5ns/div
typ tRR : 31ns
typ IRM : 1.8A
Figure 12. FDS6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
0.001
0.0001
TA = 125oC
TA = 100oC
TA = 25oC
0.00001
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
typ tRR : 31ns
typ IRM : 2.4A
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
FDS6676S Rev E1 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS6676S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDS6676 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| FDS6676AS | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
| FDS6676S | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |