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부품번호 | FDW2510NZ 기능 |
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기능 | Dual N-Channel 2.5V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
April 2004
FDW2510NZ
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Li-Ion Battery Pack
Features
• 6.4 A, 20 V
RDS(ON) = 24 mΩ @ VGS = 4.5 V
RDS(ON) = 32 mΩ @ VGS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2510NZ
FDW2510NZ
13’’
Ratings
20
±12
6.4
30
1.6
1.1
–55 to +150
77
114
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDW2510NZ Rev C(W)
Typical Characteristics
30
VGS = 10.0V
25
2.5V
3.0V
4.5V
3.5V
20
15
2.0V
10
5
1.5V
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
VGS = 2.0V
1.8
1.6
1.4
1.2
1
0.8
0
2.5V
3.0V
3.5V
4.0V
4.5V
6.0V
10.0V
4 8 12 16
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 6.4A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-25
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
150
Figure 3. On-Resistance Variation with
Temperature.
0.07
ID = 3.2A
0.06
0.05
0.04
0.03
TA = 125oC
0.02
0.01
0
TA = 25oC
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = 5V
16
12
8
4
0
0.5
TA = 125oC
25o
-55oC
1 1.5 2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
2.5 0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2510NZ Rev C(W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDW2510NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |