|
|
PDF Si4800BDY Data sheet ( Hoja de datos )
| Número de pieza | Si4800BDY | |
| Descripción | Fast Switching MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de Si4800BDY (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
Si4800BDY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0185 at VGS = 10 V
0.030 at VGS = 4.5 V
ID (A)
9
7
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• High-Efficient PWM Optimized
• 100 % UIS and Rg Tested
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)
Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 25
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
9 6.5
7.0 5.0
Pulsed Drain Current (10 µs Pulse Width)
IDM 40
Continuous Source Current (Diode Conduction)a, b
IS 2.3
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11.25
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
1.3
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typ.
40
70
24
Limits
Max.
50
95
30
Unit
°C/W
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si4800BDY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72124.
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si4800BDY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| Si4800BDY | Fast Switching MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |