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Número de pieza | Si7366DP | |
Descripción | N-Channel 20-V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Si7366DP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! N-Channel 20-V (D-S) MOSFET
Si7366DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0055 at VGS = 10 V
20
0.009 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)
20
16
FEATURES
• Halogen-free available
• TrenchFET® Power MOSFET
• Qg Optimized
APPLICATIONS
• Synchronous Rectifier for DC/DC
RoHS
COMPLIANT
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2S
3
G
4
Bottom View
Ordering Information: Si7366DP-T1-E3 (Lead (Pb)-free)
Si7366DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
20
17
13
10
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
IDM 50
IS 4.1 1.4
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
5 1.7
3.2 1.1
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
RthJA
20
53
25
70 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3.4
4.5
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. .
Document Number: 72296
S-80440-Rev. C, 03-Mar-08
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Si7366DP
Vishay Siliconix
0.05 0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72296.
Document Number: 72296
S-80440-Rev. C, 03-Mar-08
www.vishay.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet Si7366DP.PDF ] |
Número de pieza | Descripción | Fabricantes |
Si7366DP | N-Channel 20-V (D-S) MOSFET | Vishay |
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