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PDF Si7384DP Data sheet ( Hoja de datos )
| Número de pieza | Si7384DP | |
| Descripción | Fast Switching MOSFET | |
| Fabricantes | Vishay | |
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Si7384DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0085 at VGS = 10 V
30
0.0125 at VGS = 4.5 V
ID (A)
18
14
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7384DP-T1-E3 (Lead (Pb)-free)
Si7384DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free available
• TrenchFET® Gen II Power MOSFET
• PWM Optimized for High Efficiency
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Desktop
- Server
D
G
S
N-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
18
14
11
8
Pulsed Drain Current
IDM ± 50
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IS
IAS
EAS
4.1 1.5
25
32
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
5
3.2
1.8
1.1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)a
t ≤ 10 s
Steady State
RthJA
21
56
25
70 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.4
3.0
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72656
S-80439-Rev. C, 03-Mar-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Si7384DP
Vishay Siliconix
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72656.
Document Number: 72656
S-80439-Rev. C, 03-Mar-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si7384DP.PDF ] | |
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