SSM5H03TU Datasheet PDF - Toshiba Semiconductor
| Part Number | SSM5H03TU | |
| Description | Silicon Epitaxial Schottky Barrier Diode | |
| Manufacturers | Toshiba Semiconductor | |
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There is a preview and SSM5H03TU download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
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Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
SSM5H03TU
SSM5H03TU
DC-DC Converter
• Combined Nch MOSFET and Schottky Diode into one Package.
• Low RDS (ON) and Low VF
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Symbol
VDS
VGSS
ID
IDP (Note 2)
PD (Note 1)
t = 10s
Tch
Rating
12
±12
1.4
2.8
0.5
0.8
150
Unit
V
V
A
W
°C
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Symbol
VRM
VR
IO
IFSM
Tj
Rating
15
12
0.5
2 (50 Hz)
125
Unit
V
V
A
A
°C
UFV
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
Operating temperature
Tstg
Topr
(Note 3)
−55~125
−40~85
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
1 2007-11-01
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MOSFET Electrical Characteristics Graph
3
10V
2.5
2
ID – VDS (MOSFET)
4.0V
Common Source
Ta = 25°C
3.5V
1.5
VGS=3.0V
1
0.5 VGS = 2.5 V
0
0 0.5 1 1.5 2
Drain-Source voltage VDS (V)
SSM5H03TU
ID – VGS (MOSFET)
10000
Common Source
VDS = 5 V
1000
100
Ta = 85°C
10
1
0.1
25°C
−25°C
0.01
0
1234
Gate-Source voltage VGS (V)
5
RDS (ON) – ID (MOSFET)
0.5
Common Source
Ta = 25°C
0.4
0.3 4 V
0.2
VGS = 10 V
0.1
0
0 0.5 1 1.5 2 2.5 3
Drain current ID (A)
RDS (ON) – VGS (MOSFET)
0.8
Common Source
ID = 0.7 A
0.6
0.4
25°C
Ta = 85°C
0.2
−25°C
0
0 2 4 6 8 10 12
Gate-Source voltage VGS (V)
RDS (ON) – Ta (MOSFET)
0.4
Common Source
ID = 0.7 A
0.3
VGS = 4 V
0.2
10 V
0.1
0
−25 0 25 50 75 100
Ambient temperature Ta (°C)
Vth – Ta (MOSFET)
3
Common Source
VDS = 5 V
2.5 ID = 0.1 mA
2
1.5
1
0.5
0
−25 0 25 50 75
Ambient temperature Ta (°C)
100
5 2007-11-01
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SSM5H03TU electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SSM5H03TU.PDF Datasheet ] | |
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