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PDF SSM5H06FE Data sheet ( Hoja de datos )
| Número de pieza | SSM5H06FE | |
| Descripción | Silicon Epitaxial Schottky Barrier Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM5H06FE (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SSM5H06FE
Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM5H06FE
DC-DC Converter
• Combined Nch MOSFET and Schottky Diode in one Package.
• Small package
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Unit: mm
1.6±0.05
1.2±0.05
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
DC
Pulse
Symbol
VDS
VGSS
ID
IDP (Note 2)
PD (Note 1)
Tch
Rating
20
±10
100
200
150
150
Unit
V
V
mA
mW
°C
15
2
34
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Symbol
VRM
VR
IO
IFSM
Tj
Rating
15
12
100
1 (50 Hz)
125
Unit
V
V
mA
A
°C
Absolute Maximum Ratings (Ta = 25°C) MOSFET,
DIODE COMMON
1.Gate
2.Source
3.Anode
4.Cathode
5.Drain
ESV
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2P1C
Weight: 3 mg (typ.)
Characteristics
Storage temperature
Operating temperature
Symbol
Tstg
Topr
(Note 3)
Rating
−55~125
−40~100
Unit
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm2 × 5)
0.3 mm
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
1 2007-11-01
1 page  
MOSFET Electrical Characteristics Graph
SSM5H06FE
250
200
10
150
2.5
4 3 2.3
ID – VDS
2.1
Common source
Ta = 25°C
1.9
1.7
100
1.5
50
VGS = 1.3 V
0
0 0.5 1 1.5 2
Drain-Source voltage VDS (V)
1000
100
Common source
VDS = 3 V
ID – VGS
Ta = 100°C
10
25°C
1
−25°C
0.1
0.01
0
12
Gate-Source voltage VGS (V)
3
RDS (ON) – ID
12
Common source
Ta = 25°C
10
8
VGS = 1.5 V
6
4
2.5 V
2
4V
0
1 10 100 1000
Drain current ID (mA)
RDS (ON) – VGS
6
Common source
ID = 10 mA
5
4
3
Ta = 100°C
2
25°C
1
−25°C
0
0 2 4 6 8 10
Gate-Source voltage VGS (V)
RDS (ON) – Ta
8
Common source
6
VGS = 1.5 V, ID = 1 mA
4
2.5 V, 10 mA
2
4 V, 10 mA
0
−25 0
25 50
75 100 125 150
Ambient temperature Ta (°C)
Vth – Ta
2
Common source
ID = 0.1 mA
VDS = 3 V
1.6
1.2
0.8
0.4
0
−25 0
25 50
75 100 125 150
Ambient temperature Ta (°C)
5 2007-11-01
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSM5H06FE.PDF ] | |
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