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PDF SSM5G10TU Data sheet ( Hoja de datos )
| Número de pieza | SSM5G10TU | |
| Descripción | Silicon Epitaxial Schottky Barrier Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM5G10TU (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SSM5G10TU
Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode
SSM5G10TU
DC-DC Converter Applications
• 1.8-V drive
• Combines a P-channel MOSFET and a Schottky barrier diode in one
package.
• Low RDS(ON) and Low VF
Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Symbol
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
VDS
VGSS
ID
IDP (Note 2)
PD (Note 1)
t = 10 s
Tch
Schottky Barrier Diode (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
Junction temperature
Symbol
VRRM
IF(AV)
IFSM
Tj
MOSFET and Diode (Ta = 25°C)
Characteristics
Storage temperature range
Symbol
Tstg
Rating
−20
±8
−1.5
−3.0
0.5
0.8
150
Rating
20
0.7
2 (50 Hz)
125
Rating
−55 to 125
Unit
V
V
A
W
°C
Unit
V
A
A
°C
Unit
°C
UFV
JEDEC
JEITA
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2
Marking
Equivalent Circuit (top view)
54
54
KET
123
12
1
3
2008-09-27
1 page  
MOSFET
|Yfs| – ID
10
Common Source
VDS = -3.0 V
Ta = 25°C
3
1
0.3
0.1
-0.01
-0.1 -1
Drain current ID (A)
-10
1000
500
300
C – VDS
Ciss
100
50
Coss
30 Crss
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
-0.1
-1
-10
Drain-source voltage VDS (V)
-100
SSM5G10TU
10
Common Source
VGS = 0 V
D
1
G
IDR
IDR – VDS
S
0.1
Ta =100 °C
25 °C
0.01
0.001
0
−25 °C
0.5 1.0
Drain-source voltage VDS (V)
1.5
1000
toff
100
tf
t – ID
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7 Ω
10 ton
tr
1
-0.01
-0.1 -1
Drain current ID (A)
-10
Dynamic Input Characteristic
-10
Common Source
ID = -1.5 A
-8 Ta = 25°C
-6
VDD = -10 V VDD = -16 V
-4
-2
0
0 10 20
Total Gate Charge Qg (nC)
5
2008-09-27
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSM5G10TU.PDF ] | |
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