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부품번호 | SSM5P15FU 기능 |
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기능 | Field Effect Transistor | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 5 페이지수
SSM5P15FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P15FU
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V)
: Ron = 32 Ω (max) (@VGS = −2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP
PD (Note 1)
Tch
Tstg
−30
±20
−100
−200
200
150
−55~150
V
V
mA
mW
°C
°C
1: Gate1
2: Source
3: Gate2
4: Drain2
5: Drain1
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2L1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006g(typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating.
Marking
5
Equivalent Circuit (top view)
4 54
DQ
Q1 Q2
123
123
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1 2007-11-01
SSM5P15FU
1000
100
10
1
-1
100
10
1
-0.1
|Yfs| - ID
Common Source
VDS= -3V
Ta=25°C
-10 -100
Drain current ID (mA)
-1000
C - VDS
Common Source
VGS=0V
f=1MHz
Ta=25°C
Ciss
Coss
Crss
-1 -10
Drain-Source voltage VDS (V)
-100
IDR - VDS
-250
Common Source
VGS=0V
-200 Ta=25°C
-150
-100
-50
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Drain-Source voltage VDS (V)
10000
1000
toff
tf
t - ID
Common Source
VDD= -5V
VGS=0~-5V
Ta=25°C
100 ton
tr
10
-0.1
-1 -10
Drain Current ID (mA)
-100
PD* - Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta(°C)
*: Total Rating
4 2007-11-01
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SSM5P15FE | Field Effect Transistor | Toshiba Semiconductor |
SSM5P15FU | Field Effect Transistor | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |