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부품번호 | SSM6N7002AFU 기능 |
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기능 | Field Effect Transistor | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
SSM6N7002AFU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N7002AFU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
• Small package
• Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V)
: Ron = 3.2 Ω (max) (@VGS = 5 V)
: Ron = 3.0 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
2.1±0.1
1.25±0.1
Characteristics
Symbol
Rating
Drain-Source voltage
VDS
60
Gate-Source voltage
VGSS
± 20
Drain current
DC
Pulse
ID 200
IDP 800
Drain power dissipation (Ta = 25°C)
PD (Note)
300
Channel temperature
Tch 150
Storage temperature range
Tstg −55~150
Note: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm2 × 6)
0.4 mm
Unit
V
V
mA
mW
°C
°C
16
25
34
JED1.ESCOURCE1
JEI2T.AGATE1
TO3S.DHRIBAAIN2
4.S―OURCE2
5.G―ATE2
62.-D2RJ1ACIN1
WUeiSgh6t: 0.012 g (typ.)
Marking
6
5
4
Equivalent Circuit (top view)
654
NK
Q1
Q2
123
123
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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2007-05-28
5000
Common source
3000 VDS = 10 V
Ta = 25°C
⎪Yfs⎪ – ID
1000
500
300
100
10
30 50
100
300 500
Drain current ID (mA)
1000
C – VDS
50
30
Ciss
10
5
Common source
3 VGS = 0 V
f = 1 MHz
Ta = 25°C
Coss
Crss
1
1
35
10
30 50 100
Drain-Source voltage VDS (V)
SSM6N7002AFU
1000
800
Common source
VGS = 0 V
Ta = 25°C
D
IDR – VDS
600 G
400 S
200
0
0
−0.4 −0.8 −1.2 −1.6
−2
Drain-Source voltage VDS (V)
1000
500
300
tf
100
td(off)
50
30
t – ID
Common source
VDD = 30 V
VGS = 0 to 4.5 V
Ta = 25°C
10
5
3 td(on)
tr
1
13
5 10
30 50 100
Drain current ID (mA)
300 500 1000
PD* – Ta
500
Mounted on FR4 board.
(25.4 mm × 25.4 mm ×1.6 t
400 Cu pad: 0.32 mm2 × 6) Figure 1
300
200
100
0
0 40 80 120
Ambient temperature Ta (°C)
*: Total rating
160
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2007-05-28
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부품번호 | 상세설명 및 기능 | 제조사 |
SSM6N7002AFU | Field Effect Transistor | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |