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PDF SSM6L35FU Data sheet ( Hoja de datos )
| Número de pieza | SSM6L35FU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6L35FU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L35FU
○ High-Speed Switching Applications
○ Analog Switch Applications
Unit: mm
• N-ch: 1.2-V drive
P-ch: 1.2-V drive
• N-ch, P-ch, 2-in-1
• Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V)
: Ron = 8 Ω (max) (@VGS = 1.5 V)
: Ron = 4 Ω (max) (@VGS = 2.5 V)
: Ron = 3 Ω (max) (@VGS = 4.0 V)
Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V)
: Ron = 22 Ω (max) (@VGS = -1.5 V)
: Ron = 11 Ω (max) (@VGS = -2.5 V)
: Ron = 8 Ω (max) (@VGS = -4.0 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Drain–source voltage
VDSS
Gate–source voltage
VGSS
Drain current
DC
Pulse
ID
IDP
Q2 Absolute Maximum Ratings (Ta = 25°C)
20
±10
180
360
Unit
V
V
mA
1.SOURCE 1
2.GATE 1
3.DRAIN 2
4.SOURCE 2
5.GATE 2
6.DRAIN 1
JEDEC
-
JEITA
-
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
VDSS
VGSS
ID
IDP
-20
±10
-100
-200
V
V
mA
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristics
Symbol
Rating
Unit
Drain power dissipation
PD(Note 1)
200
mW
Channel temperature
Tch 150 °C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
1 2008-03-21
1 page  
Q1 (N-ch MOSFET)
Vth – Ta
1.0
Common Source
ID = 1 mA
VDS = 3 V
0.5
0
−50 0 50 100 150
Ambient temperature Ta (°C)
SSM6L35FU
1000
500
300
100
50
30
10
5
3
1
1
⎪Yfs⎪ – ID
Common Source
VDS = 3 V
Ta = 25°C
10 100 1000
Drain current ID (mA)
1000 Common Source
VGS = 0 V
100
D
IDR
IDR – VDS
G
10
S
25°C
Ta = 100°C
1
−25°C
0.1
0.01
0
−0.5
−1
Drain–source voltage VDS (V)
−1.5
C – VDS
100
50
10
5
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1
0.5
1
Ciss
Coss
Crss
5 10
50 100
Drain–source voltage VDS (V)
5000
3000 toff
1000
tf
500
300
100
ton
50
30 tr
10
0.1
t – ID
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
1 10 100
Drain current ID (mA)
1000
5
2008-03-21
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSM6L35FU.PDF ] | |
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