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TK11A55D 데이터시트 PDF




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부품번호 TK11A55D 기능
기능 Field Effect Transistor
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TK11A55D 데이터시트, 핀배열, 회로
TK11A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK11A55D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.52 (typ.)
High forward transfer admittance: Yfs= 6.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
550
±30
11
44
45
276
11
4.5
150
55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.94 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2011-04-26




TK11A55D pdf, 반도체, 판매, 대치품
RDS (ON) – Tc
2.5
COMMON SOURCE
VGS = 10 V
PULSE TEST
2.0
1.5
ID = 11 A
1.0 5.5 A
2.8 A
0.5
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
TK11A55D
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
5
3
1 VGS = 0, 1 V
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
100
CAPACITANCE – VDS
Ciss
Coss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80 40
0
40
80 120
CASE TEMPERATURE Tc (°C)
160
PD – Tc
80
60
40
20
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
VDS
400
20
16
300 12
VDD = 100 V
400
200 8
200 COMMON SOURCE
VGS
ID = 11 A
Tc = 25°C
100
PULSE TEST
4
00
0 10 20 30 40
TOTAL GATE CHARGE Qg (nC)
4 2011-04-26

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관련 데이터시트

부품번호상세설명 및 기능제조사
TK11A55D

Field Effect Transistor

Toshiba Semiconductor
Toshiba Semiconductor

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