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Número de pieza | TK11A55D | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TK11A55D (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TK11A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK11A55D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
550
±30
11
44
45
276
11
4.5
150
−55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.94 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2011-04-26
1 page TK11A55D
10
1 Duty=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
10μ
100μ
rth – tw
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
1m
10m
100m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (pulsed) *
ID max (continuous)
10
1 ms *
100 μs *
1
DC operation
Tc = 25°C
0.1
0.01
*: SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch(°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 3.94 mH
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2011-04-26
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TK11A55D.PDF ] |
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