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Número de pieza | TK3904LLD03 | |
Descripción | Plastic-Encapsulate Transistors | |
Fabricantes | WILLAS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TK3904LLD03 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! WILLAS
FM120-M
TK3904LLD03THRU
WBFB1.0PA-S0U3RDFACPElMaOsUtNicT -SECHnOcTTaKpYsBuARlaRItEeR RTErCaTnIFsIEiRsSt-o20rVs- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
TRANSISTORbetter reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
DESCRIPTIONoptimize board space.
NPN Epitaxia• lLSowilicpoowneTr rloasnss, ihsitgohrefficiency.
• High current capability, low forward voltage drop.
FEATURES • High surge capability.
Epitaxial Plana•r GDuiearCdorinnsgtrfuocr toiovnervoltage protection.
Complementar•yUPlNtraPhTiygphe-sApveaeidlasbwleitc(ThKin3g9. 06LLD03)
Ultra-Small Su•rfaScileicMonoeupnittaPxaiackl palgaenar chip, metal silicon junction.
Also Available •inLMLeIeaLad-Sd-fTrFeDree-1ep9aV5ret0sr0sm/io2en2e8t environmental standards of
• RoHS product for packing code suffix "G"
APPLICATIONHalogen free product for packing code suffix "H"
General PurpMoseecAhmapnliifciear,lsdwaitcthaing
DFoVrDp-oRrOtaMbl,eN•eoEqtpueoipxbymo:oeUknLt9P:4(Ci-.Ve,0.erMtacto.e)bdiflleampehroentaer,dManPt3, MD,CD-ROM,
• Case : Molded plastic, SOD-123H
Pb-Free
pa•cTkeramginealsis:Palavteaditlearbmlineals,
solderable
per
,
MIL-STD-750
RoHS
prod•uPcotlaforitry
paMcektihnogd
: Indicated
2c0o2d6 e suffix ”G”
by cathode band
Halogen fre•eMopurnotidnug cPtosfiotironp:aAcnky ing code suffix “H”
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
WBFBP-03D
(1.0×1.0×0.5)
unit: mm
TOP0.146(3.7)
0.130(3.3)
C
0.012(0.3) Typ.
1. BASE
B
C
E
0.071(1.8)
0.056(1.4)
2. EMITTER
3. COLLECTOR BACK
0.031(0.8) Typ.
E B0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:1N
C
MAXIMUM RATINGMSA(TXaIM=2U5M℃RuAnTleINsGsSotAhNeDrwEisLEeCnToRteICdA) L CHARACTERIST1ICNS
SymbRoaltings at 25℃ Pamarbaiemntetteemrperature unless Votahleurewise spUenciiftied.
Single phase half wave, 60Hz, resistive of inductive load.
VCBO For caCpaocllietivcetolro-aBda, sdeerVatoeltcaugrerent by 20% 60
V
BE
VCEO
Collector-Emitter Voltage
RATINGS
40 V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
VEBOMarkingECmoidtteer-Base Voltage
6
V 12 13 14 15 16
18 10
115 120
IC MaximuCmoRlleccutorrrenCtuPreraeknRt e-CveorsnetinVuolotaugse 0.2 VRRM A 20 30 40 50 60
80 100 150 200
PC MaximuCmoRlleMcStoVroDltaigsesipation
0.1 VRMS W 14 21 28 35
TJ MaximuJmunDcCtioBnlocTkeinmg pVeorltaatguere
150 VDC ℃ 20 30 40 50
Tstg MaximuSmtoArvaegreagTeeFmorpwearradtRuerectified Current
-55~150 IO
℃
Peak Forward Surge Current 8.3 ms single half sine-wave
ELECTsuRpeICrimApoLseCd oHnAratRedAloCadT(JEERDEISC TmeICthoSd)(Ta=25℃
uInFSlMess
otherwise
specified)
Typical Thermal Resistance (Note 2)
TypicaPl JaurnacmtioentCerapacitance (Note 1)
RΘJA
Symbol CJ
Test con ditions
CollecOtoperr-abtainsgeTebmrepaerkadtuorewRnanvgoeltage
V(BR)CBO TJIC=10μA,IE=0-55 to +125
42 56 70 105
60 80 100 150
1.0
30
40
Min120
60
Typ Max
Unit
-55 to +150 V
140
200
CollecSttoorra-egemTitetmeprebrarteuarekRdaonwgen voltage
V(BR)CEO TSTIGC=1mA,IB=0
-4605 to +175
V
Emit ter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
6V
CHARACTERISTICS
CollecMtoaxrimcuumt-oFoffrwcaurdrrVeonlttage at 1.0A DC
ICEX
SYMBOL FM120-MH FM130-MH FM140-MH
VFVCE=30V,VEB(off)=3V0.50
FM150-MH FM160-MH
0.70
FM180-MH FM1100-MH
0.850.05
FMμ10A1.590-MH
FM1200-
0.92
EmitteMracxuimtu-omffAcveurrargeenRteverse Current at @T A=25℃IEBO
VEB=5V,IC=0
IR
0.5
0.1 μA
Rated DC Blocking Voltage
@T A=12h5F℃E(1) VCE=1V,IC=0.1mA
40 10
hFE(2) VCE=1V,IC=1mA
NOTES:
DC cu1r-rMeenatsugraedinat 1 MHZ and applied reverse voltage ohf 4F.E0(3V)DC. VCE=1V,IC=10mA
70
100 300
2- Thermal Resistance From Junction to Ambient
Collector-emitter saturation voltage
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
60
30
0.2 V
0.3 V
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
IC=10mA,IB=1mA
IC=50mA,IB=5mA
0.65 0.85 V
0.95 V
Transitio2n0f1re2q-u0e6ncy
fT VCE=20V,IC=10mA,f=100MHz
300 WILLAS ELECTMRHOzNIC CO
2012-0
WILLAS ELECTRONIC CORP.
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet TK3904LLD03.PDF ] |
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