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PDF TK3904LLD03 Data sheet ( Hoja de datos )

Número de pieza TK3904LLD03
Descripción Plastic-Encapsulate Transistors
Fabricantes WILLAS 
Logotipo WILLAS Logotipo



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No Preview Available ! TK3904LLD03 Hoja de datos, Descripción, Manual

WILLAS
FM120-M
TK3904LLD03THRU
WBFB1.0PA-S0U3RDFACPElMaOsUtNicT -SECHnOcTTaKpYsBuARlaRItEeR RTErCaTnIFsIEiRsSt-o20rVs- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Prod
Features
Batch process design, excellent power dissipation offers
TRANSISTORbetter reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
DESCRIPTIONoptimize board space.
NPN EpitaxialLSowilicpoowneTr rloasnss, ihsitgohrefficiency.
High current capability, low forward voltage drop.
FEATURES High surge capability.
Epitaxial Planar GDuiearCdorinnsgtrfuocr toiovnervoltage protection.
ComplementaryUPlNtraPhTiygphe-sApveaeidlasbwleitc(ThKin3g9. 06LLD03)
Ultra-Small SurfaScileicMonoeupnittaPxaiackl palgaenar chip, metal silicon junction.
Also Available inLMLeIeaLad-Sd-fTrFeDree-1ep9aV5ret0sr0sm/io2en2e8t environmental standards of
RoHS product for packing code suffix "G"
APPLICATIONHalogen free product for packing code suffix "H"
General PurpMoseecAhmapnliifciear,lsdwaitcthaing
DFoVrDp-oRrOtaMbl,eNeoEqtpueoipxbymo:oeUknLt9P:4(Ci-.Ve,0.erMtacto.e)bdiflleampehroentaer,dManPt3, MD,CD-ROM,
Case : Molded plastic, SOD-123H
Pb-Free
pacTkeramginealsis:Palavteaditlearbmlineals,
solderable
per
,
MIL-STD-750
RoHS
produPcotlaforitry
paMcektihnogd
: Indicated
2c0o2d6 e suffix ”G”
by cathode band
Halogen freeMopurnotidnug cPtosfiotironp:aAcnky ing code suffix “H”
Weight : Approximated 0.011 gram
Package outline
SOD-123H
WBFBP-03D
(1.0×1.0×0.5)
unit: mm
TOP0.146(3.7)
0.130(3.3)
C
0.012(0.3) Typ.
1. BASE
B
C
E
0.071(1.8)
0.056(1.4)
2. EMITTER
3. COLLECTOR BACK
0.031(0.8) Typ.
E B0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:1N
C
MAXIMUM RATINGMSA(TXaIM=2U5MRuAnTleINsGsSotAhNeDrwEisLEeCnToRteICdA) L CHARACTERIST1ICNS
SymbRoaltings at 25℃ Pamarbaiemntetteemrperature unless Votahleurewise spUenciiftied.
  Single phase half wave, 60Hz, resistive of inductive load.
VCBO For caCpaocllietivcetolro-aBda, sdeerVatoeltcaugrerent by 20% 60
V
BE
VCEO
Collector-Emitter Voltage
RATINGS
40 V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
VEBOMarkingECmoidtteer-Base Voltage
6
V 12 13 14 15 16
18 10
115 120
IC MaximuCmoRlleccutorrrenCtuPreraeknRt e-CveorsnetinVuolotaugse 0.2 VRRM A 20 30 40 50 60
80 100 150 200
PC MaximuCmoRlleMcStoVroDltaigsesipation
0.1 VRMS W 14 21 28 35
TJ MaximuJmunDcCtioBnlocTkeinmg pVeorltaatguere
150 VDC 20 30 40 50
Tstg  MaximuSmtoArvaegreagTeeFmorpwearradtRuerectified Current
-55~150 IO
 
Peak Forward Surge Current 8.3 ms single half sine-wave
ELECTsuRpeICrimApoLseCd oHnAratRedAloCadT(JEERDEISC TmeICthoSd)(Ta=25
uInFSlMess
otherwise
specified)
Typical Thermal Resistance (Note 2)
TypicaPl JaurnacmtioentCerapacitance (Note 1)
RΘJA
Symbol CJ
 
Test con  ditions
CollecOtoperr-abtainsgeTebmrepaerkadtuorewRnanvgoeltage
V(BR)CBO TJIC=10μA,IE=0-55 to +125
42 56 70 105
60 80 100 150
1.0
 
30
40
Min120
 60
 
Typ   Max
Unit
-55 to +150 V
140
200
CollecSttoorra-egemTitetmeprebrarteuarekRdaonwgen voltage
V(BR)CEO TSTIGC=1mA,IB=0
-4605 to +175
V
Emit ter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
6V
CHARACTERISTICS
CollecMtoaxrimcuumt-oFoffrwcaurdrrVeonlttage at 1.0A DC
ICEX
SYMBOL FM120-MH FM130-MH FM140-MH
VFVCE=30V,VEB(off)=3V0.50
FM150-MH FM160-MH
0.70
FM180-MH FM1100-MH
0.850.05
FMμ10A1.590-MH
FM1200-
0.92
EmitteMracxuimtu-omffAcveurrargeenRteverse Current at @T A=25℃IEBO
VEB=5V,IC=0
IR
0.5
0.1 μA
 
Rated DC Blocking Voltage
@T A=12h5FE(1) VCE=1V,IC=0.1mA
40 10
  hFE(2) VCE=1V,IC=1mA
NOTES:
DC cu1r-rMeenatsugraedinat 1 MHZ and applied reverse voltage ohf 4F.E0(3V)DC. VCE=1V,IC=10mA
70
100 300
2- Thermal Resistance From Junction to Ambient
 
 
Collector-emitter saturation voltage
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
60
30
0.2 V
0.3 V
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
IC=10mA,IB=1mA
IC=50mA,IB=5mA
0.65 0.85 V
0.95 V
Transitio2n0f1re2q-u0e6ncy
fT VCE=20V,IC=10mA,f=100MHz
300 WILLAS ELECTMRHOzNIC CO
2012-0
WILLAS ELECTRONIC CORP.

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