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TK80X04K3 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 TK80X04K3은 전자 산업 및 응용 분야에서
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부품번호 TK80X04K3 기능
기능 Field Effect Transistor
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TK80X04K3 데이터시트, 핀배열, 회로
TK80X04K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
TK80X04K3
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 2.7 m(typ.)
High forward transfer admittance: |Yfs| = 150 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.2 MAX.
7.0 ± 0.2
4
Unit: mm
0.4 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
80
320
125
123
80
12.5
175
55 to 175
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
2.0 1.5 2.0 2.5
12
3
1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2
1. GATE G
2. N.C.
3. SOURSE S
4. DRAIN D
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
Thermal Characteristics
4
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.2
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 20 μH, IAR = 80 A, RG = 25 Ω
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on
AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-04-21




TK80X04K3 pdf, 반도체, 판매, 대치품
RDS (ON) – Tc
8
Common source
VGS = 10 V
Pulse test
6
4 ID = 20,40,80 A
2
0
80 40
0
40 80 120 160 200
Case temperature Tc (°C)
TK80X04K3
1000
IDR – VDS
Common source
Tc = 25
Pulse test
100
10
5
10
3
1
VGS = 0, 1 V
1
0
0.2
0.4
0.6 0.8
1.0
1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
100
0.1
Tc = 25°C
1
10 100
Drain-source voltage VDS (V)
Vth – Tc
6 Common source
VDS = 10 V
5 ID = 1 mA
Pulse test
4
3
2
1
0
80 40
0
40 80 120 160 200
Case temperature TC (°C)
PD Tc
160
120
80
40
0
0 40 80 120 160 200
Case temperature Tc (°C)
Dynamic input/output characteristics
40 16
VDS
30
12
8
VDD = 32 V
16
20
VGS
10
8
Common source
ID = 80 A
Tc = 25
Pulse test 4
00
0 40 80 120 160
Total gate charge Qg (nC)
4 2009-04-21

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관련 데이터시트

부품번호상세설명 및 기능제조사
TK80X04K3

Field Effect Transistor

Toshiba Semiconductor
Toshiba Semiconductor

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