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부품번호 | AP0403GH 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
전체 5 페이지수
Advanced Power
Electronics Corp.
AP0403GH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
4.5mΩ
75A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current4
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
75
50
300
44.6
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.8
62.5
110
Units
V
V
A
A
A
W
℃
℃
Units
℃/W
℃/W
℃/W
Data & specifications subject to change without notice
1
200811052
AP0403GH
8
I D =30A
6 V DS =15V
V DS =18V
V DS =24V
4
2
0
0 4 8 12 16 20 24 28 32
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
100us
10 1ms
1
T C =25 o C
Single Pulse
10ms
100ms
DC
0
0.1 1 10
V DS ,Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
f=1.0MHz
2000
C1600
iss
1200
800
C oss
400
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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부품번호 | 상세설명 및 기능 | 제조사 |
AP0403GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP0403GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |