|
|
|
부품번호 | AP9424GYT-HF-3 기능 |
|
|
기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP9424GYT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Good Thermal Performance
D
Low On-resistance
RoHS-compliant, halogen-free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The PMPAK®3x3 package is specially designed for DC-DC converter
applications, with a small foot print that offers a backside heat sink
and a low package profile.
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA=70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
BV DSS
R DS(ON)
ID
30V
6.5mΩ
18A
D
D
D
D
S
S
S
G
PMPAK®3x3
Rating
30
±20
18
14.7
72
3.57
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
4
35
Units
°C/W
°C/W
Ordering Information
AP9424GYT-HF-3TR
RoHS-compliant halogen-free PMPAK®3x3, shipped on tape
and reel (3000pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
PMPAK® is a registered trademark of Advanced Power Electronics Corp.
201003231-3 1/5
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
10
I D = 15 A
V DS =15V
8
2000
1600
AP9424GYT-HF-3
f=1.0MHz
6
4
2
0
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1200
C iss
800
C400 oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
Single Pulse
0.001
0.0001
0.001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=85°C/W
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/5
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ AP9424GYT-HF-3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP9424GYT-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |