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부품번호 | AP73T03GMT-HF-3 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP73T03GMT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
Low On-resistance
RoHS-compliant, halogen-free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The PMPAK®5x6 package is specially designed for DC-DC converter
applications, with a foot print that is compatible with the popular SO-8
and offers a backside heat sink and lower package profile.
BV DSS
R DS(ON)
ID
30V
9mΩ
58A
D
D
D
D
S
S
S
G
PMPAK®5x6
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TA=25°C
ID at TA=70°C
IDM
PD at TC=25°C
PD at TA=25°C
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
30
±20
58
18.3
14.7
160
50
5
28.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
mJ
°C
°C
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
2.5
25
Units
°C/W
°C/W
Ordering Information
AP73T03GMT-HF-3TR
RoHS-compliant halogen-free PMPAK®5x6, shipped on tape
and reel (3000pcs/reel)
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
PMPAK® is a registered trademark of Advanced Power Electronics Corp.
200912071-3 1/5
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
10
I D =20A
V DS =15V
8
1000
800
6 600
AP73T03GMT-HF-3
f=1.0MHz
C iss
4
2
0
0 4 8 12 16 20 24
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
Operation in this
area limited by
RDS(ON)
100us
10 1ms
T C =25 o C
Single Pulse
1
0.01
0.1
1
10ms
100ms
DC
10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
400
C200 oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/5
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부품번호 | 상세설명 및 기능 | 제조사 |
AP73T03GMT-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |