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부품번호 | AP70T03GS-HF-3 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP70T03GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low Gate Charge
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
30V
9mΩ
60A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP70T03GS-HF-3 is in the TO-263 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
The AP70T03GP-HF-3 is in the TO-220 through-hole package which is
used where a small PCB footprint or an attached heatsink is required.
G
DS
Absolute Maximum Ratings
G
D
S
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
TO-263 (S)
TO-220 (P)
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Value
2.8
40
62
Units
°C/W
°C/W
°C/W
Ordering Information
AP70T03GS-HF-3TR RoHS-compliant TO-263, shipped on tape and reel (800 pcs/reel)
AP70T03GP-HF-3TB RoHS-compliant TO-220, shipped in tubes
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200903053-3 1/6
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
12
I D =33A
9 V DS =16V
V DS =20V
V DS =24V
6
10000
1000
AP70T03GP/S-HF-3
f=1.0MHz
C iss
3
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
10us
100
100us
10
1ms
T C =25 o C
Single Pulse
1
0.1 1
10ms
100ms
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
C oss
C rss
100
1
8 15 22 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/6
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AP70T03GS-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |