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PDF AP1203GH Data sheet ( Hoja de datos )
| Número de pieza | AP1203GH | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP1203GH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
12mΩ
37A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
37
23.6
150
27.8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
4.5
62.5
Units
V
V
A
A
A
W
℃
℃
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200812291
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP1203GH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP1203GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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| AP1203GMA | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP1203GMT-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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