(PDF) AP2304AGN-HF Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP2304AGN-HF
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP2304AGN-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device ▼ RoHS Compliant Description SOT-23 G S Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for all commercial-industrial applications. BVDSS RDS(ON) ID G 30V 117mΩ 2.5A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Rating 30 ±20 2.5 2 10 1.38 -55 to 150 -55 to 150 Value 90 Units V V A A A W ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200805211 1 page

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PDF AP2304AGN-HF Data sheet ( Hoja de datos )