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부품번호 | AP9963GP-HF-3 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP9963GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance
RoHS-compliant, Halogen-free
G
D
S
BV DSS
RDS(ON)
ID
40V
4mΩ
160A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9963GP-HF-3 is in the TO-220 package, which is widely used
for commercial and industrial applications, and is well-suited for
low voltage applications such as DC/DC converters and motor drives.
The TO-220 through-hole package is often used where a small PCB
footprint or an attached heatsink is required.
G
D
S
D (tab)
TO-220 (P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current 3
Continuous Drain Current 3
Pulsed Drain Current 1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
40
±20
160
80
80
300
187
-55 to 175
-55 to 175
Value
0.8
62
Units
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
Ordering Information
AP9963GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200910013-3 1/5
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP9963GP-HF-3
10
I D =30A
8
V DS =20V
V DS =24V
6 V DS =32V
4
f=1.0MHz
4000
3000
C iss
2000
2
0
0 10 20 30 40 50
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
0
1
C oss
C rss
5 9 13 17 21 25
V DS ,Drain-to-Source Voltage (V)
29
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100
100us
1ms
10
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.01 0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/5
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부품번호 | 상세설명 및 기능 | 제조사 |
AP9963GP-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |