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부품번호 | AP0504GMT-HF 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP0504GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
BVDSS
RDS(ON)
ID
40V
5.5mΩ
75A
D
D
D
D
S
S
S
G
PMPAK 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
75
23.6
19
300
56.8
5
28.8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Value
2.2
25
Units
V
V
A
A
A
A
W
W
mJ
℃
℃
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200911101
AP0504GMT-HF
10
I D =20A
V DS =20V
8
6
4
2
0
0 10 20 30
Q G , Total Gate Charge (nC)
40
Fig 7. Gate Charge Characteristics
1000
Operation in this
area limited by
100 RDS(ON)
100us
10 1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.01
0.1
1
10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
2400
2000
C1600 iss
1200
800
C400 oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP0504GMT-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP0504GMT-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |