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부품번호 | AP9479GM-HF-3 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP9479GM-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
Low Gate Charge
BV DSS
60V
Fast Switching Performance
RDS(ON)
45mΩ
RoHS-compliant, halogen-free
G
ID 5.6A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9479GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Rating
60
±25
5.6
4.5
30
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP9479GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200810202-3 1/5
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
15
ID=5A
12
V DS = 30 V
V DS = 38 V
9 V DS = 48 V
10000
1000
AP9479GM-HF-3
f=1.0MHz
C iss
6
C100 oss
C rss
3
0
0 10 20
Q G , Total Gate Charge (nC)
30
Fig 7. Gate Charge Characteristics
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1 T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125°C/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10 100 1000
Fig 10. Effective Transient Thermal Impedance
30
V DS =5V
20
T j =25 o C
T j =150 o C
10
VG
4.5V
QGS
QG
QGD
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Charge
Q
Fig 12. Gate Charge Waveform
4/5
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부품번호 | 상세설명 및 기능 | 제조사 |
AP9479GM-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |