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부품번호 | AP94T07GP-HF-3 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP94T07GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-Resistance
Fast Switching Performance
RoHS-compliant, halogen-free
G
D
S
BV DSS
RDS(ON)
ID
75V
8mΩ
80A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP94T07GP-HF-3 is in the TO-220 through-hole package which is
used in commercial appplications where a low PCB footprint or an
attached heatsink is required. This device is well suited for low voltage
applications such as DC/DC converters and high current DC switches.
G
DS
D (tab)
TO-220 (P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
75
±20
80
58
300
125
45
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
mJ
°C
°C
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.2
62
Units
°C/W
°C/W
Ordering Information
AP94T07GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201010192-3 1/5
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
12
I D =40A
10
V DS =40V
8 V DS =45V
V DS =60V
6
4000
3000
2000
AP94T07GP-HF-3
f=1.0MHz
C ss
4
2
0
0 20 40 60
Q G , Total Gate Charge (nC)
80
Fig 7. Gate Charge Characteristics
1000
0
1
C oss
C rss
5 9 13 17 21 25
V DS ,Drain-to-Source Voltage (V)
29
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100
100us
1ms
10
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0 0001
PDM
t
T
Duty Factor t/T
Peak Tj PDM x Rthjc TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/5
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부품번호 | 상세설명 및 기능 | 제조사 |
AP94T07GP-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |