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Número de pieza | AP03N70J-H | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
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No Preview Available ! Advanced Power
Electronics Corp.
AP03N70H/J-H
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Repetitive Avalanche Rated
D
Fast Switching Speed
Simple Drive Requirement
RoHS Compliant
G
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC
converters. The through-hole version (AP03N70J) is available for low-
profile applications.
BVDSS
RDS(ON)
ID
700V
4.4
2.5A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
DS
TO-251(J)
Rating
700
±30
2.5
1.6
8
54.3
0.44
31
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
2.3
110
Units
/W
/W
Data & specifications subject to change without notice
200417062-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP03N70J-H.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP03N70J-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP03N70J-H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP03N70J-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP03N70J-H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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