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부품번호 | AP02N90J 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP02N90H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristics
D
Description
G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
900V
7.2
1.9A
G DS
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP02N90J) is available for low-
profile applications.
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
900
±30
1.9
1.2
6
62.5
0.5
36
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
2.0
110
Units
/W
/W
Data & specifications subject to change without notice
200418063-1/4
AP02N90H/J
14
I D = 1.9 A
12
V DS = 180 V
V DS = 360 V
10
V DS = 540 V
8
6
4
2
0
0 4 8 12
Q G , Total Gate Charge (nC)
16
Fig 7. Gate Charge Characteristics
10.00
10us
1.00
100us
1ms
0.10
0.01
0.1
T C =25 o C
Single Pulse
10ms
100ms
DC
1 10 100 1000
V DS , Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
f=1.0MHz
1000
C iss
100
C oss
10
C rss
1
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP02N90H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP02N90H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |