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부품번호 | AP02N90H-HF 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP02N90H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
D
▼ RoHS Compliant & Halogen-Free
G
Description
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for low-profile
applications.
BVDSS
RDS(ON)
ID
900V
7.2Ω
1.9A
G DS
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation4
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
+30
1.9
1.2
6
62.5
0.5
2
18
1.9
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2
62.5
110
Data & specifications subject to change without notice
Units
V
V
A
A
A
W
W/℃
W
mJ
A
℃
℃
Units
℃/W
℃/W
℃/W
1
201008115
AP02N90H/J-HF
12
I D = 1.9 A
10 V DS = 180 V
V DS = 360 V
8 V DS = 540 V
6
4
2
0
0 4 8 12
Q G , Total Gate Charge (nC)
16
Fig 7. Gate Charge Characteristics
10.00
Operation in this
area limited by
RDS(ON)
1.00
100us
1ms
10ms
0.10
100ms
DC
T C =25 o C
Single Pulse
0.01
1
10 100 1000
V DS , Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
f=1.0MHz
1000
C iss
100
C oss
10
C rss
1
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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부품번호 | 상세설명 및 기능 | 제조사 |
AP02N90H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP02N90H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |