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부품번호 | BLF888AS 기능 |
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기능 | UHF Power LDMOS Transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 17 페이지수
BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 5 — 4 November 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation
f
PL(AV)
(MHz)
(W)
PL(M)
(W)
Gp D
(dB) (%)
RF performance in a common source narrowband test circuit
CW 650 - 600 20 67
CW (42 V)
650
- 500 20 69
2-tone, class-AB
pulsed, class-AB [1]
f1 = 860; f2 = 860.1
860
250 -
21 46
- 600 20 58
DVB-T (8k OFDM)
858
110 -
21 31
858
125 -
21 32.5
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM)
858
110 -
20 30
858
120 -
20 31
IMD3
(dBc)
-
-
32
-
-
-
-
-
IMDshldr
(dBc)
-
-
-
-
32 [2]
30 [2]
32 [2]
31 [2]
PAR
(dB)
-
-
-
-
8.2 [3]
8.0 [3]
8.0 [3]
7.8 [3]
[1] Measured at = 10 %; tp = 100 s.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
NXP Semiconductors
BLF888A; BLF888AS
UHF power LDMOS transistor
Table 7. RF characteristics
RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
2-Tone, class-AB
VDS
IDq
PL(AV)
Gp
D
IMD3
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
DVB-T (8k OFDM), class-AB
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
- 50
[1] -
1.3
250 -
-
-
-
V
A
W
20 21 - dB
42 46 - %
- 32 28 dBc
VDS
IDq
PL(AV)
Gp
D
IMDshldr
PAR
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
-
[1] -
110
20
28
[2] -
[3] -
50 -
1.3 -
--
21 -
31 -
32 28
8.2 -
V
A
W
dB
%
dBc
dB
[1] IDq for total device.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
400
Coss
(pF)
300
001aam579
200
100
BLF888A_BLF888AS
Product data sheet
0
0 20 40 60
VDS (V)
Fig 1.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per
section
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 4 November 2013
© NXP B.V. 2013. All rights reserved.
4 of 17
4페이지 NXP Semiconductors
BLF888A; BLF888AS
UHF power LDMOS transistor
7.3 Impedance information
BLF888A_BLF888AS
Product data sheet
gate 1
Zi
gate 2
Fig 8. Definition of transistor impedance
drain 1
ZL
drain 2
001aan207
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 110 W (DVB-T).
f Zi ZL
MHz
300
0.617 j1.715
4.989 + j1.365
325
0.635 j1.355
4.867 + j1.424
350
0.655 j1.026
4.741 + j1.472
375
0.677 j0.721
4.614 + j1.511
400
0.702 j0.435
4.486 + j1.540
425
0.731 j0.164
4.357 + j1.559
450
0.762 + j0.096
4.228 + j1.570
475
0.798 + j0.347
4.100 + j1.573
500
0.839 + j0.592
4.974 + j1.567
525
0.884 + j0.833
3.850 + j1.554
550
0.936 + j1.072
3.728 + j1.534
575
0.995 + j1.310
3.608 + j1.508
600
1.063 + j1.549
3.492 + j1.475
625
1.141 + j1.791
3.378 + j1.437
650
1.230 + j2.037
3.268 + j1.394
675
1.334 + j2.289
3.161 + j1.347
700
1.456 + j2.548
3.057 + j1.295
725
1.599 + j2.814
2.957 + j1.239
750
1.768 + j3.090
2.860 + j1.180
775
1.971 + j3.376
2.676 + j1.118
800
2.214 + j3.671
2.677 + j1.053
825
2.510 + j3.975
2.591 + j0.985
850
2.873 + j4.282
2.508 + j0.915
875
3.320 + j4.584
2.428 + j0.843
900
3.875 + j4.865
2.351 + j0.770
925
4.562 + j5.095
2.277 + j0.695
950
5.409 + j5.223
2.206 + j0.618
975
6.426 + j5.166
2.138 + j0.540
1000
7.587 + j4.807
2.073 + j0.461
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 4 November 2013
© NXP B.V. 2013. All rights reserved.
7 of 17
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BLF888A | UHF Power LDMOS Transistor | NXP Semiconductors |
BLF888AS | UHF Power LDMOS Transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |