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PDF SiE854DF Data sheet ( Hoja de datos )
| Número de pieza | SiE854DF | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 100-V (D-S) MOSFET
SiE854DF
Vishay Siliconix
PRODUCT SUMMARY
ID (A)
VDS (V)
RDS(on) (Ω)
Silicon Package
Limit Limit Qg (Typ.)
100 0.0142 at VGS = 10 V 64
60a 50 nC
Package Drawing
www.vishay.com/doc?72945
10 9 8
D GS
7
S
PolarPAK
6
D6
7
8 9 10
D D S GD
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
• Half-Bridge
D
G
D GS
S
1 23
4
Top View
D
5
54
32 1
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE854DF-T1-E3 (Lead (Pb)-free)
SiE854DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?69824
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
100
± 20
64 (Silicon Limit)
60a (Package Limit)
52
13.2b, c
10.5b, c
60
60a
4.3b, c
40
80
125
80
5.2b, c
3.3b, c
- 55 to 150
260
V
A
mJ
W
°C
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
1
1 page  
SiE854DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80 140
70
60
50 Package Limited
40
30
20
10
120
100
80
60
40
20
0
0 25 50 75 100 125 150
0
25
TC - Case Temperature (°C)
Current Derating*
50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69824
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SiE854DF.PDF ] | |
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