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부품번호 | AP9465BGJ 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP9465BGH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D BVDSS
40V
RDS(ON)
32mΩ
G ID 20A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
The through-hole version (AP9465BGJ) are available for low-profile
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
G
D
S
Rating
40
+20
20
12
60
20.8
0.17
-55 to 150
-55 to 150
TO-252(H)
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
6.0
62.5
110
Units
℃/W
℃/W
℃/W
1
200903092
AP9465BGH/J
16
I D =12A
12
V DS =20V
V DS =24V
V DS =32V
8
4
0
0 4 8 12
Q G , Total Gate Charge (nC)
16
Fig 7. Gate Charge Characteristics
100
10
100us
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0
0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
40
V DS =5V
30
20
T j =25 o C
T j =150 o C
10
0
012345
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP9465BGH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9465BGJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |