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부품번호 | AP94T07GH-HF 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP94T07GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
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The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP94T07GJ) is
available for low-profile applications.
BVDSS
RDS(ON)
ID
75V
8mΩ
75A
GD
S
TO-251(J)
G
D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@Tc=25℃
ID@Tc=100℃
IDM
PD@Tc=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
75
+20
75
58
300
125
2.4
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.2
62.5
110
Units
℃/W
℃/W
℃/W
1
201104282
AP94T07GH/J-HF
12
I D =40A
10
V DS =40V
8 V DS =45V
V DS =60V
6
4
2
0
0 20 40 60
Q G , Total Gate Charge (nC)
80
Fig 7. Gate Charge Characteristics
1000
Operation in this area
limited by RDS(ON)
100
100us
10 1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
f=1.0MHz
4000
3000
C iss
2000
1000
0
1
C oss
C rss
5 9 13 17 21 25
V DS ,Drain-to-Source Voltage (V)
29
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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부품번호 | 상세설명 및 기능 | 제조사 |
AP94T07GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |